台湾
台积电半导体专用IC Foundr创建y business model when it was founded in 1987. TSMC served more than 600 customers, manufacturing more than 11,000 products for various applications covering a variety of computer, communications and consumer electronics market segments. Total capacity of the manufacturing facilities managed by TSMC, including subsidiaries and joint ventures, reached 15.1 million eight-inch equivalent wafers in 2012. TSMC operates three advanced 12-inch wafer GIGAFAB™ facilities (fab 12, 14 and 15), four eight-inch wafer fabs (fab 3, 5, 6, and 8), and one six-inch wafer fab (fab 2). TSMC also manages two eight-inch fabs at wholly owned subsidiaries: WaferTech in the United States and TSMC China Company Limited, In addition, TSMC obtains 8-inch wafer capacity from other companies in which the Company has an equity interest.
台积电的16/12海里提供了业界16 / 14nm制产品中表现最好的。相比TSMC的20nm的SoC的过程中，16/12毫微米为50％更快，以相同的速度消耗60％较少的功率。它提供了用于下一代高端移动计算，网络通信，消费者和汽车电子应用优异的性能和功率消耗的优点。
台积电’s 10nm Fin Field-Effect Transistor (FinFET) process provides the most competitive combination of performance, power, area, and delivery parameters. The Company began accepting customer tape-outs for its 10nm FinFET process in the first quarter of 2016, and started high-volume shipments in early 2017, successfully supported major customers’ new mobile product launches.
台积电’s 7nm Fin Field-Effect Transistor (FinFET) process technology provides the industry’s most competitive logic density and sets the industry pace for 7nm process technology development by delivering 256Mb SRAM with double-digit yields in June 2016. Risk production started in April 2017, and we received more than ten customer product tape-outs in 2017.
TSMC的5nm的鳍式场效应晶体管（FinFET）工艺技术被用于移动和高性能计算应用进行了优化。它计划开始生产的风险在2019年下半年。
台积电is dedicated to developing leading edge technology that provides the foundation for semiconductor innovation. TSMC’s leading edge processes combine advanced 193nm immersion photolithography, performance-enhancing silicon strain technology, and extreme low-k (ELK) inter-metal dielectric materials to support both the performance and reliability required by today’s advanced technology designs.
台积电提供代工段领先的先进的工艺技术和设计的抵押品。这些包括55纳米，65纳米，90纳米和0.13微米工艺。TSMC的先进12英寸工艺技术提供栅极密度，速度和功率的最佳组合，使其成为理想的范围广泛的应用，例如计算，通信和消费电子产品。每个节点支持逻辑，和具有可用于65纳米和90纳米的嵌入式DRAM选项的混合信号/ RF选项。设计抵押物包括台积电内部宏和代工最大的第三方IP库的组合。
许多台积电的开放创新Platform®目标先进技术的部署。这是合作模式汇集了合作伙伴和客户的最佳技术略同，并带动了台积电的声誉在通过曲线的前缘斜坡先进的技术工艺。
台积电先进技术是显著领先的ITRS路线图。该公司提供了新的先进技术的产生，每两年。每个节点通过超过接近一半的区域中的前一个和通常设有多30〜50％的性能，同时支持类似泄漏水平。台积电斜坡在多个300毫米GIGAFAB™设备在同一个节点每个将产生超过每月10万12英寸晶圆提供了大量先进技术的能力。
Application specific solutions for cellular base band, PC graphic, Power IC, WLAN and Cellular RF, provide process technologies, design kits and tools, and test and assembly services that optimize costs and device performance. We welcome technology phase-ins and support process customization to meet very specific design requirements.
除了晶片的制造服务，TSMC提供广泛的后端服务。利用台积电的多元化和精简，其中包括一站式服务：
晶圆凸点服务
芯片晶圆基片上
WLCSP
台积电began providing testing services in the late 1980’s and, over time, has expanded its services to cover not only memory, logic and mixed-mode, but also today’s RF and direct docking technologies. TSMC continues to invest in advanced ATE development and is continuously installing an advanced yield analysis infrastructure.
